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| inchange semiconductor product specification silicon npn power transistors 2SC1847 description ? ? with to-126 package ? complement to type 2sa886 ?low collector saturation applications ? for medium output power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 50 v v ceo collector-emitter voltage open base 40 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 1.5 a i cm collector current-peak 3 a 1.2* 1 p c collector power dissipation t c =25 ?? 5* 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? note) *1: without heat sink *2: with a 100 ? 100 ? 2 mm a1 heat sink
inchange semiconductor product specification 2 silicon npn power transistors 2SC1847 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =2ma;i b =0 40 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 50 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =2a ;i b =0.2a 1.5 v i cbo collector cut-off current v cb =20v; i e =0 1 | a i ceo collector cut-off current v ce =10v; i b =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe dc current gain i c =1a ; v ce =5v 80 220 c ob output capacitance i e =0 ; v cb =20v;f=1mhz 35 pf f t transition frequency i c =0.5a ; v cb =5v,f=200mhz 150 mhz ? h fe classifications q r 80-160 120-220 inchange semiconductor product specification 3 silicon npn power transistors 2SC1847 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors 2SC1847 |
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